FMMT493-G datasheet(2/5 Pages) COMCHIP

2 / 5 page

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-base breakdown voltage

0.1

IC = 100μA , IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

IC = 10mA , IB = 0

IE = 100μA , IC = 0

VCB = 100V , IE = 0

V ES = 100V , I = 0

VCE = 10V , IC = 1mA

IC = 500mA , IB = 50mA

VCE = 10V , IC = 50mA , f = 100MHZ

VCB = 10V, IE = 0 , f = 1MHZ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICES

hFE(1)*

VCE(sat) 1*

Cob

100

120

0.1

100

0.3

µA

MHZ

VCE = 10V , IC = 250mA

hFE(2)*

100

Base-emitter saturation voltage

IC = 1A , IB = 100mA

VBE(sat)*

1.15

Typ

150

Emitter cut-off current

VEB = 4V , IC = 0

IEBO

0.1

µA

VCE = 10V , IC = 0.5A

hFE(3)*

300

VCE = 10V , IC = 1A

hFE(4)*

IC = 1A , IB = 100mA

VCE(sat) 2*

0.6

Base-emitter voltage

VCE = 10V IC = 1A

VBE*

*Pulse test: pulse width

≤ 300µs, duty cycles ≤ 2.0%

General Purpose Transistor

Page 2

REV:A

QW-BTR47

Company reserves the right to improve product design , functions and reliability without notice.

RATING AND CHARACTERISTIC CURVES ( FMMT493-G )

100

200

Collector Current , IC (mA)

Fig.2 - hFE — IC

100

1000

Collector-Emitter Voltage, VCE (V)

Fig.1 - Static Characteristic

Ta=100°C

Ta=25°C

VCE = 10V

IB=3uA

IB=6uA

IB=9uA

IB=12uA

IB=15uA

IB=18uA

IB=21uA

IB=24uA

IB=27uA

IB=30uA

-500uA

-450uA

COMMON

EMITTER

Ta=25°C

150

250

300

350

400

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