RoHS Device

General Purpose Transistor

Page 1

REV:A

Features

- Complementary type FMMT593

QW-BTR47

Company reserves the right to improve product design , functions and reliability without notice.

Emitter-base voltage

Collector-emitter voltage

Collector-base voltage

Collector current

Symbol

Parameter

Value

Unit

V

V

V

5

100

120

1000

mA

250

mW

Collector power dissipation

°C/W

500

°C

Junction temperature range

150

°C

Tstg

Storage temperature range

-55~+150

Thermal resistance from junction to ambient

- Low saturation voltage

- High hFE Max. 300@250mA

1

Base

2

Emitter

Collector

3

- 1 : BASE

- 3 : COLLECTOR

- 2 : EMITTER

Circuit Diagram

0.055(1.40)

0.047(1.20)

0.041(1.05)

0.035(0.90)

Dimensions in inches and (millimeter)

0.020(0.50)

0.012(0.30)

SOT-23

1

0.118(3.00)

0.110(2.80)

0.079(2.00)

0.071(1.80)

3

2

0.100(2.55)

0.089(2.25)

0.006(0.15)

0.003(0.08)

0.004(0.10)

0.000(0.00)