ACE2370M datasheet(1/7 Pages) ACE

No. de pieza	ACE2370M

Descripción Electrónicos	N-Channel 100-V MOSFET

PDF	7 Pages

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE2370M

N-Channel 100-V MOSFET

VER 1.1

1

Description

ACE2370M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications:

• PoE Power Sourcing Equipment

• PoE Powered Devices

• Telecom DC/DC converters

• White LED boost converters

Absolute Maximum Ratings

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

Continuous Drain Current

a

TA=25°C

ID

1.5

A

TA=70°C

1.2

Pulsed Drain Current

b

IDM

10

Continuous Source Current (Diode Conduction)

a

IS

1.6

A

Power Dissipation

a

TA=25°C

PD

1.3

W

TA=70°C

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum Unit

Maximum Junction-to-Ambient

a

t<=10sec

RθJA

100

°C/W

Steady State

166

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

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ACE2370M Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE2370M Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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