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STW56N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STW56N60DM2
Descripción Electrónicos  N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package
PDF  12 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW56N60DM2 Datasheet(HTML) 1 Page - STMicroelectronics

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June 2015
DocID026982 Rev 3
1/12
This is information on a product in full production.
www.st.com
STW56N60DM2
N-
channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STW56N60DM2
600 V
0.060 Ω
50 A
360 W
•
Fast-recovery body diode
•
Extremely low gate charge and input
capacitance
•
Low on-resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STW56N60DM2
56N60DM2
TO-247
Tube
TO-247
1
2
3
AM15572v1_no_tab
D(2)
G(1)
S(3)


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