BTS550P datasheet(7/15 Pages) INFINEON

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Data Sheet BTS550P

Infineon Technologies AG

2003-Oct-01

Truth Table

Input

current

Output

Current

Sense

Remark

level

IIS

Normal

operation

nominal

=IL / kilis, up to IIS=IIS,lim

Very high

load current

IIS, lim

up to VON=VON(Fold back)

IIS no longer proportional to IL

Current-

limitation

VON > VON(Fold back)

if VON>VON(SC), shutdown will occure

Short circuit to

GND

Over-

temperature

Short circuit to

Vbb

<nominal 22)

Open load

Z23)

Negative output

voltage clamp

Inverse load

current

L = "Low" Level

H = "High" Level

Options Overview

Type

BTS

6510P

550P

650P

555

Overtemperature protection with hysteresis

Tj >150 °C, latch function24)

Tj >150 °C, with auto-restart on cooling

Short circuit to GND protection

with overtemperature shutdown

switches off when VON>6 V typ.

(when first turned on after approx. 180

µs)

Overvoltage shutdown

Output negative voltage transient limit

to Vbb - VON(CL)

to VOUT = -19 V typ

X25)

Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)

Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)

) Low ohmic short to V

bb may reduce the output current IL and can thus be detected via the sense current IIS.

) Power Transistor "OFF", potential defined by external impedance.

) Latch except when V

bb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠

0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch

between turn on and td(SC).

) Can be "switched off" by using a diode D

S (see page 8) or leaving open the current sense output.

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