BTS550P datasheet(6/15 Pages) INFINEON

6 / 15 page

Data Sheet BTS550P

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Infineon Technologies AG

2003-Oct-01

Diagnostic Characteristics

Current sense ratio,

IL = 120 A,Tj =-40°C:

static on-condition,

Tj =25°C:

kILIS = IL : IIS,

Tj =150°C:

VON < 1.5 V19),

IL = 20 A,Tj =-40°C:

VIS <VOUT - 5 v,

Tj =25°C:

VbIN > 4.0 V

Tj =150°C:

see diagram on page 11

IL = 12 A,Tj =-40°C:

Tj =25°C:

Tj =150°C:

IL = 6 A,Tj =-40°C:

Tj =25°C:

Tj =150°C:

kILIS

19 000

18 000

18 500

18 000

16 000

17 000

17 500

12 000

14 000

16 000

20 600

20 500

19 000

22 300

21 400

19 500

23 500

22 000

19 900

28 000

24 000

20 500

23 000

22 500

21 500

26 000

25 000

23 000

30 000

26 500

24 500

46 000

34 000

30 000

IS=0 by IIN =0 (e.g. during deenergizing of inductive loads):

Sense current saturation

IIS,lim

6.5

Current sense leakage current

IIN = 0:

VIN = 0, IL

≤ 0:

IIS(LL)

IIS(LH)

0.5

µA

Current sense settling time20)

ts(IS)

500

µs

Overvoltage protection

Tj =-40°C:

Ibb = 15 mA

Tj = 25...+150°C:

VbIS(Z)

Input

Input and operating current (see diagram page 12)

IN grounded (VIN = 0)

IIN(on)

0.8

1.5

Input current for turn-off21)

IIN(off)

µA

19) If VON is higher, the sense current is no longer proportional to the load current due to sense current

saturation, see

IIS,lim .

) not subject to production test, specified by design

) We recommend the resistance between IN and GND to be less than 0.5 k

Ω for turn-on and more than

500

Ω for turn-off. Consider that when the device is switched off (IIN =0) the voltage between IN and GND

reaches almost Vbb.

BTS550P Datasheet(PDF) 6 Page - Infineon Technologies AG

BTS550P Datasheet(HTML) 6 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Descarga

Enlace URL