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RPC564L60L5BFSR Datasheet(PDF) 92 Page - STMicroelectronics |
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RPC564L60L5BFSR Datasheet(HTML) 92 Page - STMicroelectronics |
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92 / 137 page ![]() Electrical characteristics RPC56EL60L5 92/137 DocID026934 Rev 1 The following bipolar transistors are supported: BCP68 from ON Semiconductor BCX68 from Infineon The recommended external ballast transistor is the bipolar transistor BCP68 with the gain range of 85 up to 375 (for IC=500mA, VCE=1V) provided by several suppliers. This includes the gain variations BCP68-10, BCP68-16 and BCP68-25.The most important parameters for the interoperability with the integrated voltage regulator are the DC current gain (hFE) and the temperature coefficient of the gain (XTB). While the specified gain range of most BCP68 vendors is the same, there are slight variations in the temperature coefficient parameter. RPC56EL60L5 Voltage regulator operation was simulated against the typical variation on temperature coefficient and against the specified gain range to have a robust design. Table 16. Characteristics Symbol Parameter Value Unit hFE( ) DC current gain (Beta) 85 - 375 — PD Maximum power dissipation @ TA=25°C (1) 1. derating factor 12mW/degC 1.5 W ICMaxDC Maximum peak collector current 1.0 A VCESAT Collector-to-emitter saturation voltage(Max) 600(2) 2. Adjust resistor at bipolar transistor collector for 3.3V to avoid VCE<VCESAT mV VBE Base-to-emitter voltage (Max) 1.0 V Table 17. Voltage regulator electrical specifications Symbol Parameter Conditions Min Typ Max Unit Cex t External decoupling/ stability capacitor Min, max values shall be granted with respect to tolerance, voltage, temperature, and aging variations. 12 — 40 µF SR Combined ESR of external capacitor — 1 — 100 m SR Number of pins for external decoupling/ stability capacitor —5 — — — CV1V2 SR Total capacitance on 1.2 V pins Ceramic capacitors, taking into account tolerance, aging, voltage and temperature variation 300 — 900 nF tSU Start-up time after main supply stabilization Cload = 10 µF × 4 — — 2.5 ms |
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