DMN6069SFG

Document number: DS37821 Rev. 3 - 2

2 of 8

www.diodes.com

September 2015

© Diodes Incorporated

DMN6069SFG

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Steady

State

5.6

4.5

A

Steady

State

18

14.5

A

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

25

A

Maximum Continuous Body Diode Forward Current (Note 6)

2.5

A

Avalanche Current (Note 7) L = 0.1mH

12

A

Repetitive Avalanche Energy (Note 7) L = 0.1mH

7.2

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.93

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

134

°C/W

t<10s

82

Total Power Dissipation (Note 6)

2.4

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

53

°C/W

t<10s

33

Thermal Resistance, Junction to Case

5

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.