MMDF2P01HD datasheet(1/12 Pages) ONSEMI | P?묬hannel SO??, Dual Power MOSFET

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MMDF2P01HD Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza	MMDF2P01HD

Descripción Electrónicos	P?묬hannel SO??, Dual Power MOSFET

PDF	12 Pages

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

Página de inicio	http://www.onsemi.com

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© Semiconductor Components Industries, LLC, 2000

September, 2004 − Rev. XXX

1

Publication Order Number:

MMDF2P01HD/D

MMDF2P01HD

Preferred Device

Power MOSFET

2 Amps, 12 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOS

t devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives.

• Ultra Low R

DS(on) Provides Higher Efficiency and Extends Battery

Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS Specified at Elevated Temperature

• Mounting Information for SO−8 Package Provided

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

12

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

12

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 8.0

Vdc

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 100°C

Drain Current − Single Pulse (tp ≤ 10 µs)

ID

ID

IDM

3.4

2.1

17

Adc

Apk

Total Power Dissipation @ TA = 25°C

(Note 2.)

PD

2.0

Watts

Operating and Storage Temperature Range

− 55 to 150

°C

Thermal Resistance − Junction to Ambient

(Note 2.)

RθJA

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−1

Drain−2

Drain−2

D

S

G

2 AMPERES

12 VOLTS

RDS(on) = 180 mW

1

8

Device

Package

Shipping

ORDERING INFORMATION

MMDF2P01HDR2

SO−8

2500 Tape & Reel

SO−8, Dual

CASE 751

STYLE 11

http://onsemi.com

P−Channel

LYWW

MARKING

DIAGRAM

D2P01

D2P01 = Device Code

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.

Número de pieza similar - MMDF2P01HD

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	MMDF2P01HD	284Kb / 10P	DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

Descripción similar - MMDF2P01HD

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