ACE3010M datasheet(1/7 Pages) ACE

No. de pieza	ACE3010M

Descripción Electrónicos	N-Channel 100-V MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE3010M

N-Channel 100-V MOSFET

VER 1.1

1

Description

ACE3010M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications:

• PoE Power Sourcing Equipment

• PoE Powered Devices

• Telecom DC/DC converters

• White LED boost converters

Absolute Maximum Ratings

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

Continuous Drain Current

TC=25°C

ID

26

A

Pulsed Drain Current

b

IDM

100

Continuous Source Current (Diode Conduction)

IS

30

A

Power Dissipation

TC=25°C

PD

100

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum Unit

Maximum Junction-to-Ambient

a

RθJA

40

°C/W

Maximum Junction-to-Case

RθJC

1.5

Notes

a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.

b. Pulse width limited by maximum junction temperature.

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ACE3010M Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE3010M Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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