ACE1710B datasheet(2/6 Pages) ACE

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ACE1710B

N-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=250µA

100

110

Zero gate voltage drain current

IDSS

VDS=100V, VGS=0V

µA

Gate threshold voltage

VGS(TH)

VGS=VDS, IDS=250µA

1.2

1.8

2.5

Gate leakage current

IGSS

VGS=±20V, VDS=0V

100

Drain-source on-state resistance

RDS(ON)

VGS=10V, ID=1A

250

280

mΩ

Forward transconductance

gFS

VDS=5V, ID=1A

1.2

Diode forward voltage

VSD

ISD=1.3A, VGS=0V

1.2

Maximum body-diode

continuous current

1.6

Switching

Total gate charge

VGS=10V, VDS=50V,ID=1.3A

5.2

Gate-source charge

Qgs

0.75

Gate-drain charge

Qgd

1.4

Turn-on delay time

td(on)

VGS=10V, RL=39Ω,ID=1.3A,

VDS=50V, RG=1Ω

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Dynamic

Input capacitance

Ciss

VGS=0V,VDS=50V

F=1.0MHz

190

Output capacitance

Coss

Reverse transfer capacitance

Crss

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board,t≤10sec.

3. Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%.

4. Guaranteed by design,not subject to production

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