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UTT60N10G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UTT60N10G-TN3-R
Descripción Electrónicos  N-CHANNEL MOSFET TRANSISTOR
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT60N10G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT60N10
Power MOSFE
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-664.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±25
V
Continuous
ID
60
A
Drain Current
Pulsed
IDM
100
A
Avalanche Energy
Single Pulsed
EAS
270
mJ
TO-220
100
W
TO-220F1
W
Power Dissipation
TO-252
PD
114
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220/ TO-220F1
62.5
Junction to Ambient
TO-252
θJA
100
°C/W
TO-220
1.25
TO-220F1
1.77
Junction to Case
TO-252
θJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
1
µA
Forward
VGS=+25V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-25V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
15
24
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1320 1900
pF
Output Capacitance
COSS
330
680
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
132
200
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
140
ns
Rise Time
tR
180
ns
Turn-OFF Delay Time
tD(OFF)
2180
ns
Fall-Time
tF
VDD=30V, ID=0.5A, RG=50Ω,
VGS=10V
396
ns
Total Gate Charge
QG
213
nC
Gate to Source Charge
QGS
17
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=25V, ID=1.3A,
IG=100µA
33
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
60
A
Maximum Body-Diode Pulsed Current
ISM
100
A
Drain-Source Diode Forward Voltage
VSD
IS=30A, VGS=0V
1.5
V



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