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UT50N03G-TND-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT50N03G-TND-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UT50N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-168.F ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 180 A Single Pulsed Avalanche Energy (Note 3) EAS 45 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 3) θJA 71.4 °C/W Junction to Case θJC 3.0 °C/W Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu |
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