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UF630L-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

No. de pieza UF630L-TN3-R
Descripción Electrónicos  N-CHANNEL POWER MOSFET
PDF  8 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF630L-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UF630
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-049.J
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Drain-Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C)
VDGR
200
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
9
A
Pulsed Drain Current (Note 2)
IDM
36
A
Single Pulse Avalanche Energy (Note 3)
EAS
150
mJ
TO-220/TO-262
73
TO-220F1/ TO-220F
38
TO-220F2
42
TO-251/ TO-252
46
Power Dissipation
SOP-8
PD
5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
TO-220/TO-262
TO-220F1/ TO-220F
TO-220F2
62.5
TO-251/ TO-252
100.3
Junction to Ambient
SOP-8
θJA
83
°C/W
TO-220/TO-262
1.71
TO-220F1/ TO-220F
3.31
TO-220F2
2.98
TO-251/ TO-252
2.7
Junction to Case
SOP-8
θJC
24
°C/W



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