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UT4435G-S08-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UT4435G-S08-R
Descripción Electrónicos  P-CHANNEL POWER MOSFET
PDF  4 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4435G-S08-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT4435
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-254.D
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 2)
ID
-8.8
A
Pulsed Drain Current (Note 2)
IDM
-50
A
Power Dissipation
PD
1
W
Junction Temperature
TJ
175
°С
Storage Temperature
TSTG
-55 ~ +175
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
125
°С/W
Junction-to-Case
θJC
25
°С/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24 V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VGS= ±25 V, VDS=0V
±100
nA
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, IDS=-250µA
-1
-1.7
-3
V
On State Drain Current
ID(ON)
VGS= -10V, VDS=-5V
-50
A
VGS=-10V, ID=-8.8A
15
20
Static Drain–Source On–Resistance
RDS(ON)
VGS=4.5V, ID=-6.7A
22
35
mΩ
Forward Transconductance
gFS
VDS=-5V, ID=-8.8A
24
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1604
pF
Output Capacitance
COSS
408
pF
Reverse Transfer Capacitance
CRSS
VDS=-15V, VGS=0V, f=1.0MHz
202
pF
SWITCHING PARAMETERS
(Note)
Total Gate Charge
QG
17
24
nC
Gate-Source Charge
QGS
5
nC
Gate-Drain Charge
QGD
VDS =-15 V, VGS =-5 V, ID =-8.8 A
6
nC
Turn-ON Delay Time
tD(ON)
13
23
ns
Turn-ON Rise Time
tR
13.5
24
ns
Turn-OFF Delay Time
tD(OFF)
42
68
ns
Turn-OFF Fall-Time
tF
VDD=-15V,ID=-1 A,VGS=-10 V
RG=6 Ω,
25
40
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
VSD
IS=-2.1A, VGS=0V
-0.73
-1.2
V
Maximum Body-Diode Continuous
Current
IS
-2.1
A
Note: Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%



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