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UT06P03L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT06P03L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UT06P03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-156.D ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -4 A Pulsed Drain Current (Note 1, 2) IDM -20 A Total Power Dissipation (TA = 25°C) SOT-89 PD 0.78 W SOT-26 0.41 W TO-252 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MAX UNIT Junction to Ambient SOT-89 θJA 160 °C/W SOT-26 300 °C/W TO-252 110 °C/W Junction to Case SOT-89 θJC 18 °C/W SOT-26 110 °C/W TO-252 7.93 °C/W |
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