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HRP45N06K Datasheet(PDF) 1 Page - SemiHow Co.,Ltd.

No. de pieza HRP45N06K
Descripción Electrónicos  60V N-Channel Trench MOSFET
PDF  8 Pages
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Fabricante Electrónico  SEMIHOW [SemiHow Co.,Ltd.]
Página de inicio  http://www.semihow.com
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HRP45N06K Datasheet(HTML) 1 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,December 2014
BV
DSS = 60 V
R
DS(on) typ = 3.7mΩ
I
D = 150 A
FEATURES
HRP45N06K
60V N-Channel Trench MOSFET
 Originative New Design
 Superior Avalanche Rugged Technology
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 120 nC (Typ.)
 Extended Safe Operating Area
 Lower R
DS(ON) : 3.7 mΩ (Typ.) @VGS=10V
 100% Avalanche Tested
December 2014
1.Gate 2. Drain 3. Source
2
1
3
TO-220
Absolute Maximum Ratings
T
C=25℃ unless otherwise specified
Thermal Resistance Characteristics
Symbol
Parameter
Value
Units
V
DSS
Drain-Source Voltage
60
V
I
D
Drain Current
– Continuous (T
C = 25℃)
150
A
Drain Current
– Continuous (T
C = 100℃)
105
A
I
DM
Drain Current
– Pulsed
(Note 1)
525
A
V
GS
Gate-Source Voltage
±25
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1080
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
19
mJ
P
D
Power Dissipation (T
C = 25℃)
- Derate above 25℃
190
W
1.27
W/℃
T
J, TSTG
Operating and Storage Temperature Range
-55 to +175
℃
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
--
0.8
℃/W
RθCS
Case-to-Sink
0.5
--
RθJA
Junction-to-Ambient
--
62.5


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