TSM9434CSRL datasheet(2/6 Pages) TSC

2 / 6 page

TSM9434

20V P-Channel MOSFET

2/6

Version: B12

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = - 250uA

BVDSS

-20

Gate Threshold Voltage

VDS = VGS, ID = - 250uA

VGS(TH)

-0.4

-1.0

Zero Gate Voltage Drain Current

VDS = -16V, VGS = 0V

IDSS

-1.0

Gate Body Leakage

VGS = ±8V, VDS = 0V

IGSS

±100

On-State Drain Current

VDS ≤-5V, VGS = -4.5V

ID(ON)

-10

Drain-Source On-State Resistance

VGS = -4.5V, ID = -6.4A

RDS(ON)

mΩ

VGS = -2.5V, ID = -5.1A

Forward Transconductance

VDS = -9V, ID = -6.4A

gfs

Diode Forward Voltage

IS = -2.5A, VGS = 0V

VSD

- 0.9

-1.2

Dynamic

Total Gate Charge

VDS = -10V, ID = -6.4A,

VGS = -4.5V

12.5

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

3.3

Input Capacitance

VDS = -10V, VGS = 0V,

f = 1.0MHz

Ciss

1020

Output Capacitance

Coss

191

Reverse Transfer Capacitance

Crss

140

Switching

Turn-On Delay Time

VDD = -10V, RL = 10Ω,

ID = -1A, VGEN = -4.5V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

110

Turn-Off Fall Time

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

TSM9434CSRL Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM9434CSRL Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL