TSM70N10CPROG datasheet(2/8 Pages) TSC

2 / 8 page

TSM70N10

100V N-Channel Power MOSFET

2/8

Version: D14

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

RӨJC

oC/W

Thermal Resistance - Junction to Ambient

RӨJA

oC/W

Electrical Specifications (TJ=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

100

Drain-Source On-State Resistance

VGS = 10V, ID = 30A

RDS(ON)

mΩ

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

Zero Gate Voltage Drain Current

VDS = 80V, VGS = 0V

IDSS

µA

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Dynamic

Total Gate Charge

VDS = 50V, ID = 30A,

VGS = 10V

145

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 30V, VGS = 0V,

f = 1.0MHz

Ciss

4300

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

120

Switching

Turn-On Delay Time

VGS = 10V, VDS = 50V,

RG = 3Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Drain-Source Diode Characteristics and Maximum Rating

Drain-Source Diode Forward

Voltage

VGS=0V, IS=30A

VSD

0.8

1.3

Reverse Recovery Time

IS = 30A, TJ=25

dI/dt = 100A/µs

trr

165

Reverse Recovery Charge

Qrr

175

Notes:

Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference

is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is

determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air

The maximum current is limited by package.

TSM70N10CPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

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