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TSM60N06 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM60N06
Descripción Electrónicos  60V N-Channel Power MOSFET
PDF  4 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM60N06 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM60N06
60V N-Channel Power MOSFET
2/4
Version: A12
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
60
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 30A
RDS(ON)
--
6.3
7.3
m
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2
3
4
V
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Dynamic
Total Gate Charge
VDS = 30V, ID = 30A,
VGS = 10V
Qg
--
81
--
nC
Gate-Source Charge
Qgs
--
23
--
Gate-Drain Charge
Qgd
--
24
--
Input Capacitance
VDS = 30V, VGS = 0V,
f = 1.0MHz
Ciss
--
4382
--
pF
Output Capacitance
Coss
--
668
--
Reverse Transfer Capacitance
Crss
--
339
--
Switching
Turn-On Delay Time
VGS = 10V, VDS = 30V,
RG = 3.3Ω, ID = 30A
td(on)
--
25
--
nS
Turn-On Rise Time
tr
--
19
--
Turn-Off Delay Time
td(off)
--
85
--
Turn-Off Fall Time
tf
--
43
--
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS = 0V, IS = 20A
VSD
-
0.8
1.3
V
Reverse Recovery Time
IS = 30A, TJ = 25 ℃
dI/dt = 100A/us
tfr
36
nS
Reverse Recovery Charge
Qfr
53
nC
Notes:
1.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air



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