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AN2344 Datasheet(PDF) 25 Page - STMicroelectronics |
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AN2344 Datasheet(HTML) 25 Page - STMicroelectronics |
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25 / 27 page ![]() AN2344 References 25/27 Appendix B References ● Stout, R.P., Billings, D.T. How to Extend the Thermal RC Network Model to Respond to an Arbitrary Fast Input. 14th IEEE SEMI-THERM, 1998. ● Sze, S.M. Physics of Semiconductor Devices. 2nd ed. Canada: John Wiley & Sons, Inc., 1981. ● Stoltenburg, R.R. gBoundary of Power MOS UIS Avalanche Current Capability.h IEEE Applied Power Electronics Conference Proceedings 359-64: (Mar 1989). ● McGloin, J., Sdrulla, D. Estimating the Temperature Rise of Power MOSFETs During the UIS Test. IEEE, 1992. ● Blackburn, David L. Power MOSFET Failure Revisited. PESC, 1988. |
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