ACE2N7002 datasheet(1/5 Pages) ACE

No. de pieza	ACE2N7002

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE2N7002

N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

Features

 Low On-Resistance

 Fast Switching Speed

 Low-voltage drive

 Easily designed drive circuits

 We declare that the material of product is ROHS compliant.

 ESD ProtectedL2000V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±

20

V

Drain Current(Continuous)

TA=25

OC

ID

250

mA

Drain Current(Pulse)

IDM

*1

1.6

A

Power Dissipation

TA=25

OC

PD

1.4

mW

Operating Temperature/Storage Temperature TJ,TSTG -55 to 150

OC

*Pw≦10μs, Duty cycle ≦ 1%

*When mounted on a 1*0.75*0.062 inch glass epoxy board%

Packaging Type

SOT-23-3

3

1

2

Ordering information

ACE2N7002 XX + H

SOT-23-3

Description

1

Gate

2

Source

3

Drain

BM : SOT-23-3

Pb - free

Halogen - free

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ACE2N7002 Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE2N7002 Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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