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ACE2N7002 Datasheet(PDF) 2 Page - ACE Technology Co., LTD.

No. de pieza ACE2N7002
Descripción Electrónicos  N-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Fabricante Electrónico  ACE [ACE Technology Co., LTD.]
Página de inicio  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE2N7002 Datasheet(HTML) 2 Page - ACE Technology Co., LTD.

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ACE2N7002
                                  N-Channel Enhancement Mode Field Effect Transistor 
VER 1.1
2
Electrical Characteristics
TA=25
OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-10uA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=60 V, VGS=0V
1
Ua
Gate Threshold Voltage
VGS(th)
VGS= VDS, lDS=250 uA
1.0
1.85
2.5
V
Gate Leakage Current
IGSS
VGS=+20V, VDS=0V
10
uA
Drain-Source On-state Resistance
RDS(ON)
VGS=10V, ID=0.5A
7.5
Ω
VGS=5V, ID=0.05A
7.5
Ω
Forward Transconductance
gFS
VDS=10V, ID=-0.5A
15
S
Switching characteristics(3)
Turn-On Delay Time
Td(on)
ID=0.19, VDS=30V
VGS=10V,RL=155Ω
12
ns
Turn-Off Delay Time
td(off)
20
Dynamic characteristics(3)
Input Capacitance
Ciss
VGS=0V, VDS=25V
f=1.0MHz
52
pF
Output Capacitance
Coss
7.7
Reverse Transfer Capacitance
Crss
3.9
Note: 1. Pulse test: PW≦300us, duty cycle≦1%
Typical Performance Characteristics



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