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RFD10P03LSM Datasheet(PDF) 5 Page - Intersil Corporation

No. de pieza RFD10P03LSM
Descripción Electrónicos  10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
PDF  8 Pages
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Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD10P03LSM Datasheet(HTML) 5 Page - Intersil Corporation

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7-7
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
0.4
0.8
1.0
1.2
TJ, JUNCTION TEMPERATURE (
oC)
200
VGS = VDS,ID = -250µA
0.6
125
20
30
40
50
0
25
100
150
50
0
10
RGS, GATE TO SOURCE RESISTANCE (Ω)
td(OFF)
td(ON)
tr
tf
75
VDD = -15V, ID = -10A, RL= 1.50Ω
-30
-22.5
-15
-7.5
0
-5.00
-3.75
-2.50
-1.25
0.00
20
IG(REF)
IG(ACT)
80
IG(REF)
IG(ACT)
t, TIME (
µs)
VDD = BVDSS
RL = 3.0Ω
IG(REF) = -0.25mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VGS = -5V
VDD =BVDSS
800
600
400
200
0
0
-5
-10
-15
-20
-25
VDS, DRAIN TO SOURCE VOLTAGE (V)
1200
CISS
COSS
CRSS
1000
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
tP
0.01
Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
VDD
VDS
BVDSS
tP
IAS
tAV
0
RFD10P03L, RFD10P03LSM, RFP10P03L



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