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IRF232 Datasheet(PDF) 2 Page - Intersil Corporation |
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IRF232 Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 7 page  2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF230 IRF231 IRF232 IRF233 UNITS Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS 200 150 200 150 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 200 150 200 150 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 9.0 6.0 9.0 6.0 8.0 5.0 8.0 5.0 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 36 36 32 32 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 75 75 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS 150 150 150 150 mJ Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to T J = 125 oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) IRF230, IRF232 200 - - V IRF231, IRF233 150 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V IRF230, IRF231 9.0 - - A IRF232, IRF233 8.0 - - A Drain to Source On Resistance (Note 2) rDS(ON) ID = 5A, VGS = 10V, (Figure 8, 9) IRF230, IRF231 - 0.25 0.4 Ω IRF232, IRF233 - 0.4 0.6 Ω Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 5A, (Figure 12) 3.0 4.8 - S Turn-On Delay Time td(ON) VDD = 90V, ID ≈ 5A,RG = 15Ω, RL =18Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - - 30 ns Rise Time tr - - 50 ns Turn-Off Delay Time td(OFF) - - 50 ns Fall Time tf - - 40 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 12A, VDS = 0.8V x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -19 30 nC Gate to Source Charge Qgs -10- nC Gate to Drain “Miller” Charge Qgd -9- nC IRF230, IRF231, IRF232, IRF233 |
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