IRF232 datasheet(5/7 Pages) INTERSIL

No. de pieza	IRF232

Descripción Electrónicos	8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	INTERSIL [Intersil Corporation]

Página de inicio	http://www.intersil.com/cda/home

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5 / 7 page

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

µs PULSE TEST

4.0V

VGS = 5.0V

10V

1234

VGS, GATE TO SOURCE VOLTAGE (V)

VDS > ID(ON) x rDS(ON)MAX

µs PULSE TEST

125oC

25oC

-55oC

ID, DRAIN CURRENT (A)

040

0.8

0.6

VGS = 20V

µs PULSE TEST

0.2

VGS = 10V

2.2

1.4

0.6

060

-60

TJ, JUNCTION TEMPERATURE (

oC)

ID = 3.5A

1.8

1.0

0.2

-40

-20

100

140

120

VGS = 10V

1.25

1.05

0.85

160

TJ, JUNCTION TEMPERATURE (

oC)

1.15

0.95

0.75

-40

120

ID = 250µA

VDS, DRAIN TO SOURCE VOLTAGE (V)

2000

1600

1200

800

400

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

CISS

COSS

CRSS

IRF230, IRF231, IRF232, IRF233

IRF232 Datasheet(PDF) 5 Page - Intersil Corporation

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