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MS6N95 Datasheet(PDF) 2 Page - Bruckewell Technology LTD |
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MS6N95 Datasheet(HTML) 2 Page - Bruckewell Technology LTD |
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2 / 4 page ![]() MS6N95 950V N-Channel MOSFET Publication Order Number: [MS6N95] © Bruckewell Technology Corporation Rev. A -2014 Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit PD Power Dissipation (TC=25°C) - Derate above 25°C 56 W 0.48 W/°C TJ/TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 °C ●Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 2.25 °C/W RθJA Junction-to-Ambient -- 62.5 On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS = VGS , ID = 250μA 3.0 -- 5.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V , ID = 3 A -- 1.95 2.40 Ω Off Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V , ID = 250μA 900 -- -- V △BV DSS / △T J Breakdown Voltage Temperature Coefficient ID=250μA , Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 950 V , VGS = 0 V VDS = 720 V , VC = 125 °C -- -- 10 100 μA IGSSF Gate-Body Leakage Current,Forward VGS = 30 V , VDS = 0 V -- -- 100 μA IGSSR Gate-Body Leakage Current,Reverse VGS = -30V , VDS = 0 V -- -- -100 nA Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units CISS Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0MHz -- 1500 -- pF COSS Coss Output Capacitance -- 120 -- pF CRSS Crss Reverse Transfer Capacitance -- 12 -- pF |
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