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SSF5506 Datasheet(PDF) 3 Page - Silikron Semiconductor Co.,LTD. |
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SSF5506 Datasheet(HTML) 3 Page - Silikron Semiconductor Co.,LTD. |
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3 / 8 page ![]() SSF5506 ©Silikron Semiconductor CO.,LTD. 2013.08.13 Version : 1.1 page 3 of 8 www.silikron.com Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes : ① Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width li ② mited by max. junction temperature. ③ The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④ The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C |
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