2SC535 datasheet(3/12 Pages) HITACHI

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2SC535

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

4—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.5

µAV

CB = 10 V, IE = 0

DC current transfer ratio

FE*

—

200

CE = 6 V, IC = 1 mA

Base to emitter voltage

—

0.72

—

CE = 6 V, IC = 1 mA

Collector to emitter saturation

voltage

CE(sat)

—

0.17

—

C = 20 mA, IB =4 mA

Gain bandwidth product

450

940

—

MHz

CE = 6 V, IC = 5 mA

Collector output capacitance

Cob

—

0.9

1.2

CB = 10 V, IE = 0, f = 1 MHz

Power gain

—

CE = 6 V, IC = 1 mA,

f = 100 MHz

Noise figure

—

3.5

5.5

CE = 6 V, IC = 1 mA,

f = 100 MHz, R

g = 50 Ω

Input admittance (typ)

yie

1.3 + j5.3

CE = 6 V, IC = 1 mA,

f = 100 MHz

Reverse transfer admittance

(typ)

yre

–0.078 – j0.41

Foward transfer admittance

(typ)

yfe

32 – j10

Output admittance (typ)

yoe

0.08 + j0.82

Note:

1. The 2SC535 is grouped by h

FE as follows.

60 to 120

100 to 200

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