NPT1007 datasheet(2/7 Pages) MA-COM

2 / 7 page

NPT1007

NDS-012 Rev. 3, April 2013

NPT1007

Page 2

Absolute Maximum Ratings: Not Simultaneous, Per Transistor, TA = 25°C Unless Otherwise Noted

Symbol

Parameter

Min

Typ

Max

Units

Off Characteristics

VBDS

Drain-Source Breakdown Voltage

(VGS = -8V, ID = 36mA)

100

IDLK

Drain-Source Leakage Current

(VGS = -8V, VDS = 60V)

On Characteristics

Gate Threshold Voltage

(VDS = 28V, ID = 36mA)

-2.3

-1.8

-1.3

VGSQ

Gate Quiescent Voltage

(VDS = 28V, ID = 700mA)

-2.0

-1.5

-1.0

RON

On Resistance

(VGS = 2V, ID = 270mA)

0.13

0.14

ID,MAX

Drain Current

(VDS = 7V pulsed, 300ms pulse width,

0.2% duty cycle)

19.0

20.5

Symbol

Parameter

Max

Units

VDS

Drain-Source Voltage

100

VGS

Gate-Source Voltage

-10 to 3

Gate Current

180

Total Device Power Dissipation (Derated above 25°C), both transistors on

175

qJC

Thermal Resistance (Junction-to-Case),

composite for both transistors on, TJ = 180°C

1.0

°C/W

Thermal Resistance (Junction-to-Case),

one transistor on, one off, TJ = 180°C

1.8

TSTG

Storage Temperature Range

-65 to 150

°C

Operating Junction Temperature

200

°C

HBM

Human Body Model ESD Rating (per JESD22-A114)

1C (>1000V)

Machine Model ESD Rating (per JESD22-A115)

A (>100V)

CDM

Charge Device Model ESD Rating (per JESD22-C101)

IV (>4000V)

DC Specifications: Per Transistor, TA = 25°C

NPT1007 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

NPT1007 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

Html Pages

1 2 3 4 5 6 7

Datasheet Descarga

Enlace URL