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NPT1007 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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NPT1007 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 7 page  NPT1007 NDS-012 Rev. 3, April 2013 NPT1007 Page 1 FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature combined or push-pull configuration • 90W CW power from 500-1000MHz in application design AD-014 • High efficiency from 14V to 28V • 1.0 °C/W RTH with maximum TJ rating of 200°C • Robust up to 10:1 VSWR mismatch at all angles with no device degradation • Subject to EAR99 export control DC – 1200 MHz 14 – 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature Combined Test Fixture2. Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C Measured in Nitronex Quadrature Combined Test Fixture2 . Symbol Parameter Typ Units P3dB,PEP Peak Envelope Power at 3dB Gain Compression 53.4 dBm P1dB,PEP Peak Envelope Power at 1dB Gain Compression 52.6 dBm PIMD3 Peak Envelope Power at -35dBc IMD3 50.8 dBm Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 52.0 53.0 - dBm GSS Small Signal Gain 17.3 18.3 - dB h Drain Efficiency at 3dB Gain Compression21 57 63 - % VSWR 10:1 VSWR at all phase angles No change in device performance Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2: Includes ~ 0.2 dB quadrature combiner loss. Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2: Includes ~ 0.2 dB quadrature combiner loss. |
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