IRF634FP datasheet(3/14 Pages) STMICROELECTRONICS

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Product(s)

IRF634 - IRF634FP

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IRF634

IRF634FP

VDS

Drain-source voltage (VGS = 0)

250

VDGR

Drain-gate voltage (RGS = 20 kΩ)250

VGS

Gate- source voltage

± 20

Drain current (continuos) at TC = 25°C

8(1)

Limited only by maximum temperature allowed

Drain current (continuos) at TC = 100°C

5(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

32(1)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.64

0.24

W/°C

dv/dt (3)

ISD ≤8A, di/dt ≤300 A/ms, VDD ≤V(BR)DSS, Tj ≤Tjmax

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (DC)

2000

Tstg

Storage temperature

–65 to 150

°C

Max. operating junction temperature

150

°C

Table 2.

Thermal data

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.56

4.11

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

300

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