IXTH6N150 datasheet(1/5 Pages) IXYS

No. de pieza	IXTH6N150

Descripción Electrónicos	High Voltage Power MOSFETs

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Fabricante Electrónico	IXYS [IXYS Corporation]

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DS100233B(05/12)

High Voltage

Power MOSFETs

IXTT6N150

IXTH6N150

V

DSS

= 1500V

I

D25

=6A

R

DS(on) ≤

≤≤≤≤

3.5

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1500

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C6

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

24

A

I

A

T

C = 25°C3

A

E

AS

T

C = 25°C

500

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C

540

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

4

g

TO-247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1500

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

5.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

3.5

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-268 (IXTT)

S

G

D (Tab)

Features

International Standard Packages

Molding Epoxies Weet UL 94 V-0

Flammability Classification

Fast Intrinsic Diode

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

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