IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT6N150

IXTH6N150

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

4.0

6.5

mS

C

iss

2230

pF

C

oss

V

170

pF

C

rss

64

pF

t

d(on)

22

ns

t

r

20

ns

t

d(off)

50

ns

t

f

38

ns

Q

g(on)

67

nC

Q

gs

V

12

nC

Q

gd

36

nC

R

thJC

0.23

°C/W

R

thCS

TO-247

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

6

A

I

SM

Repetitive, Pulse Width Limited by T

JM

24

A

V

SD

I

1.3

V

t

rr

1.5

μs

I

RM

12

A

Q

RM

9

μC

Resistive Switching Times

V

R

I

V

TO-247 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate

2,4 - Drain

3 - Source

e

∅ P

1

2

3

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC