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STW30NM50N Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STW30NM50N
Descripción Electrónicos  N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
PDF  18 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW30NM50N Datasheet(HTML) 5 Page - STMicroelectronics

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STB/I/F/P/W30NM50N
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min. Typ.
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 250 V, ID = 13.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
23
20
115
60
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
27
108
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 27 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 27 A, di/dt = 100 A/µs
VDD= 100 V Tj = 25°C
(see Figure 20)
480
8
33
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 27 A, di/dt = 100 A/µs
VDD= 100 V Tj = 150°C
(see Figure 20)
540
10
35
ns
µC
A
Obsolete
Product(s)
- Obsolete
Product(s)



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