UT4450G-S08-R datasheet(3/9 Pages) UTC

3 / 9 page

UT4450

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-898, C



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TA=25°C

TA=70°C

5.5

Pulsed (Note 1)

IDM

Avalanche Current (Note 1)

IAS

Avalanche Energy

L=0.1mH (Note 1)

EAS

Power Dissipation (Note 2)

TA=25°C

3.1

TA=70°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

t ≤10s (Note 3)

θJA

°C/W

Steady-State (Note 3, 4)

°C/W

Notes: 1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low

frequency and duty cycles to keep initialTJ=25°C.

2. Based on TJ(MAX)=150°C, using≤10s.

3. The device is measured that mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

4. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient.

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