UT3N10L-AE3-R datasheet(1/4 Pages) UTC

No. de pieza	UT3N10L-AE3-R

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3N10

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-859.A

N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

DESCRIPTION

The UTC UT3N10 is an N-channel power MOSFET

providing very low on-resistance. It has high efficiency and

perfect cost-effectiveness. It can be generally applied in the

commercial and industrial fields.

FEATURES

* Simple drive requirement

SYMBOL

Gate

Source

Drain

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

UT3N10L-AE3-R

UT3N10G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

MARKING

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UT3N10L-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies

UT3N10L-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies

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