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15N10L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 15N10L-TN3-R
Descripción Electrónicos  14.7A, 100V (D-S) N-CHANNEL POWER MOSFET
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

15N10L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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15N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-846.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
TC=25°C, TJ=150°C
ID
14.7
A
TC=70°C, TJ=150°C
13.6
A
Pulsed
IDM
59
A
Power Dissipation
TC=25°C
PD
34.7
W
TC=70°C
22.2
W
Operating Junction Temperature
TJ
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case (Note)
θJC
3.6
°C/W
Note: The device mounted on 1in
2 FR4 board with 2 oz copper.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VGS=+20V, VDS=0V
+100 nA
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Drain-Source On-State Resistance (Note)
RDS(ON)
VGS=10V, ID=8A
80
100 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1MHz
890
pF
Output Capacitance
COSS
58
pF
Reverse Transfer Capacitance
CRSS
23
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=80V, ID=10A
24
nC
Total Gate Charge
QG
VGS=4.5V, VDS=80V, ID=10A
13
nC
Gate to Source Charge
QGS
4.6
nC
Gate to Drain Charge
QGD
7.6
nC
Gate-Resistance
RG
VDS=0V, VGS=0V, f=1MHz
0.9
Ω
Turn-ON Delay Time
tD(ON)
VDS=50V, RL=5Ω, VGEN=10V,
RG=1Ω
14
ns
Rise Time
tR
33
ns
Turn-OFF Delay Time
tD(OFF)
39
ns
Fall-Time
tF
5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=8A, VGS=0V
0.9
1.2
V
Note: Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing.



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