STP36N55M5 datasheet(1/15 Pages) STMICROELECTRONICS

No. de pieza	STP36N55M5

Descripción Electrónicos	N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

PDF	15 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 15 page

This is information on a product in full production.

October 2012

Doc ID 022902 Rev 2

1/15

15

STP36N55M5

STW36N55M5

N-channel 550 V, 0.06

Ω typ., 33 A MDmesh™ V Power MOSFET

in TO-220 and TO-247 packages

Datasheet — production data

Features

■ Worldwide best RDS(on) * area

■ Higher VDSS rating and high dv/dt capability

■ Excellent switching performance

■ 100% avalanche tested

Applications

■ Switching applications

Description

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Figure 1.

Internal schematic diagram

Order codes

VDSS @

TJmax

RDS(on)

max

ID

STP36N55M5

600 V

< 0.08

Ω

33 A

STW36N55M5

TO-247

TO-220

1

2

3

TAB

1

2

3

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STP36N55M5

36N55M5

TO-220

Tube

STW36N55M5

TO-247

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