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TSC5802DCPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSC5802DCPROG
Descripción Electrónicos  High Voltage Fast-Switching NPN Power Transistor
PDF  5 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5802DCPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
1/5
Version: A13
TO-251
(IPAK)
TO-252
(DPAK)
PRODUCT SUMMARY
BVCEO
450V
BVCBO
1050V
IC
2A
VCE(SAT)
0.5V @ IC=0.7A, IB=0.14A
Features
●
High Voltage Capability
●
High Switching Speed
Block Diagram
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC5802DCH C5G
TO-251
75pcs / Tube
TSC5802DCP ROG
TO-252
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (TA = 25
oC, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
1050
V
Collector-Emitter Voltage @ VBE=0V
VCES
450
V
Emitter-Base Voltage
VEBO
15
V
Collector Current
IC
2
A
Collector Peak Current (tp <5ms)
ICM
4
A
Base Current
IB
1.5
A
Base Peak Current (tp <5ms)
IBM
3
A
Power Total Dissipation @ Tc=25ºC
PDTOT
30
W
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-55 to +150
oC
Note: Single Pulse. PW = 300uS, Duty ≤2%
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance – Junction to Case
RӨJC
4.17
oC/W
Thermal Resistance - Junction to Ambient
RӨJA
100
oC/W
Pin Definition:
1. Base
2. Collector
3. Emitter


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