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TSC5802DCPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSC5802DCPROG
Descripción Electrónicos  High Voltage Fast-Switching NPN Power Transistor
PDF  5 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5802DCPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
2/5
Version: A13
Electrical Specifications (TA = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =0.5mA
BVCBO
1050
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA
BVCEO
450
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA
BVEBO
15
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
10
250
uA
Collector Cutoff Current
VCB =950V, IE =0
ICBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC=0.7A, IB =0.14A
VCE(SAT)1
---
--
0.5
V
Collector-Emitter Saturation Voltage
IC=2A, IB =0.6A
VCE(SAT)2
---
1.5
3.0
V
Base-Emitter Saturation Voltage
IC=2A, IB =0.6A
VBE(SAT)1
--
1.0
1.6
V
DC Current Gain
VCE =5V, IC =100mA
hFE1
50
70
100
VCE =3V, IC =500mA
hFE2
18
23
50
Diode Forward Voltage
IC=1A
VF
--
--
1.5
V
Resistive Load Switching Time (Ratings)
Rise Time
VCC =5V, IC =0.5A,
tr
--
--
1
uS
Storage Time
tSTG
2.5
3
3.5
uS
Fall Time
tf
--
--
1.2
uS
Notes: Pulsed duration =380uS, duty cycle ≤2%



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