2PD601BRL datasheet(6/13 Pages) NXP

No. de pieza	2PD601BRL

Descripción Electrónicos	50 V, 200 mA NPN general-purpose transistors

PDF	13 Pages

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Fabricante Electrónico	NXP [NXP Semiconductors]

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2PD601BRL_2PD601BSL

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Product data sheet

Rev. 1 — 28 June 2010

6 of 13

NXP Semiconductors

2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

VCE = 10 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 6.

2PD601BSL: DC current gain as a function of

collector current; typical values

Fig 7.

2PD601BSL: Collector current as a function of

collector-emitter voltage; typical values

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 8.

2PD601BSL: Collector-emitter saturation voltage as a function of collector current; typical values

006aac454

200

400

600

hFE

IC (mA)

10−1

103

102

110

(1)

(3)

(2)

VCE (V)

0.0

10.0

8.0

4.0

6.0

2.0

006aac455

0.04

0.08

0.12

(A)

0.0

IB (mA) = 0.56

0.50

0.44

0.38

0.32

0.26

0.20

0.14

0.08

0.02

006aac456

IC (mA)

10−1

103

102

110

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

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