2PD601BRL_2PD601BSL

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 1 — 28 June 2010

2 of 13

NXP Semiconductors

2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 3.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1base

2emitter

3

collector

12

3

sym021

3

2

1

Table 4.

Ordering information

Type number

Package

Name

Description

Version

2PD601BRL

-

plastic surface-mounted package; 3 leads

SOT23

2PD601BSL

Table 5.

Marking codes

Type number

Marking code[1]

2PD601BRL

ML*

2PD601BSL

MM*

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

60

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

6

V

collector current

-

200

mA

peak collector current

single pulse;

-300

mA

peak base current

single pulse;

-200

mA