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STGWT40V60DF Datasheet(PDF) 8 Page - STMicroelectronics |
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STGWT40V60DF Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 17 page ![]() Electrical characteristics STGW40V60DF, STGWT40V60DF 8/17 DocID024402 Rev 5 Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage Figure 16. Switching losses vs. collector current Figure 17. Switching losses vs. gate resistance Figure 18. Switching losses vs. junction temperature Figure 19. Switching losses vs. collector emitter voltage C(pF) 10 0.1 VCE(V) 1000 1 10 100 10000 Cies Coes Cres AM17397v1 VGE(V) 0 0 Qg(nC) 50 100 2 150 200 250 4 6 8 10 12 14 16 AM17398v1 E(μJ) 0 0 IC(A) 800 20 40 400 1200 60 80 VCC=400V, VGE=15V Rg=10Ω, Tj=175°C 1600 2000 2400 2800 Eon Eoff AM17399v1 E(μJ) 0 Rg(Ω) 700 10 20 300 1100 30 40 VCC=400V, VGE=15V IC=40A, Tj=175°C 1500 1900 2300 Eon Eoff AM17400v1 E(μJ) 25 TJ(°C) 500 50 75 300 700 100 125 VCC=400V, VGE=15V IC=40A, Rg=10Ω 900 1100 1300 Eon Eoff 150 AM17401v1 E(μJ) 150 VCE(V) 600 200 250 200 1000 300 350 VGE=15V, Tj=175°C IC=40A, Rg=10Ω Eon Eoff 400 800 1200 400 450 1400 1600 AM17402v1 |
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