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STGWT40V60DF Datasheet(PDF) 7 Page - STMicroelectronics |
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STGWT40V60DF Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 17 page ![]() DocID024402 Rev 5 7/17 STGW40V60DF, STGWT40V60DF Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current Figure 12. Normalized VGE(th) vs junction temperature Figure 13. Normalized V(BR)CES vs. junction temperature IC 40 30 10 0 1 (A) 10 50 60 f(kHz) 20 70 80 TC=80°C TC=100°C rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10Ω, Vge=0/15V, Tj=175 °C) 90 AM17391v1 IC 100 10 0.1 0.01 1 (A) 10 VCE(V) 1 10μs 100μs 1ms 100 Single pulse, Tc=25°C Tj<175°C, VGE=15V AM17392v1 IC 80 60 20 0 6 (A) 8 VGE(V) 40 Tj=175°C Tj=25°C Tj=-40°C 10 140 120 100 160 AM17393v1 VF 1.6 0.8 10 (V) 20 IF(A) 1.2 Tj=175°C Tj=25°C Tj=-40°C 30 2.0 2.4 40 50 60 70 80 AM17394v1 VGE(th) 0.8 0.6 -50 (norm) TC(°C) 0.7 0 0.9 1.0 50 100 150 VCE=VGE IC=1mA AM17395v1 V(BR)CES 1.1 0.9 -50 (norm) TC(°C) 1.0 0 50 100 150 0.95 1.05 IC=2mA AM17396v1 |
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