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MMDF2P03HD Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza MMDF2P03HD
Descripción Electrónicos  Power MOSFET 2 Amps, 30 Volts P?묬hannel SO??, Dual
PDF  10 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF2P03HD Datasheet(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
−
−
27
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
1.0
10
μAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
−
1.5
4.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
−
−
0.170
0.225
0.200
0.300
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
2.0
3.4
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
397
550
pF
Output Capacitance
Coss
−
189
250
Transfer Capacitance
Crss
−
64
126
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
−
16.25
33
ns
Rise Time
tr
−
17.5
35
Turn−Off Delay Time
td(off)
−
62.5
125
Fall Time
tf
−
194
390
Turn−On Delay Time
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
−
9.0
18
Rise Time
tr
−
10
20
Turn−Off Delay Time
td(off)
−
81
162
Fall Time
tf
−
192
384
Gate Charge
See Figure 8
(VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
−
14.2
19
nC
Q1
−
1.1
−
Q2
−
4.5
−
Q3
−
3.5
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 3.)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
1.82
1.36
2.0
−
Vdc
Reverse Recovery Time
See Figure 15
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
−
42.3
−
ns
ta
−
15.6
−
tb
−
26.7
−
Reverse Recovery Stored Charge
QRR
−
0.044
−
μC
1. Negative sign for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.



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