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Handwound Datasheet(PDF) 11 Page - Freescale Semiconductor, Inc

No. de pieza Handwound
Descripción Electrónicos  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
PDF  23 Pages
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Fabricante Electrónico  FREESCALE [Freescale Semiconductor, Inc]
Página de inicio  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

Handwound Datasheet(HTML) 11 Page - Freescale Semiconductor, Inc

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MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT
30
20
90
40
28
70
50
Pout, OUTPUT POWER (WATTS)
Figure 15. Power Gain and Drain Efficiency
versus Output Power
26
23
2000
25
40
60
80
27
29
1000
D
Gps
VDD =50 Vdc,IDQ = 200 mA
24
30
100
108 MHz
98 MHz
87.5 MHz
108 MHz
98 MHz
87.5 MHz
VDD =50 Vdc,IDQ = 200 mA, Pout = 1100 W CW
f
MHz
Zsource
Zload
87.5
2.20 + j6.70
4.90 + j2.90
98
2.30 + j6.90
4.10 + j2.50
108
2.30 + j7.00
4.40 + j3.60
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 16. Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load Impedance
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
--
+
+
Zsource
Zload
50 
50 



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