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Handwound Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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Handwound Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
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3 / 23 page ![]() MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 3 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 23.0 24.0 26.0 dB Drain Efficiency D 72.5 74.0 — % Input Return Loss IRL — --14 --10 dB Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage, VDD Result 230 Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 1500 Peak (3 dB Overdrive) 50 No Device Degradation 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. |
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