RJM0407JSC datasheet(7/12 Pages) RENESAS

No. de pieza	RJM0407JSC

Descripción Electrónicos	40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching

PDF	12 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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RJM0407JSC

Preliminary

R07DS0368EJ0100 Rev.1.00

Page 7 of 11

Sep 20, 2012

 MOS4, 5, 6 (Pch)

Tc = 25

°C

1 shot Pulse

DC Operation

PW = 10 ms

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Drain Current ID (A)

Static Drain to Source On State Resistance

vs. Drain Current

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

100

−4

−8

−12

−16

−20

Gate to Source Voltage VGS (V)

Static Drain to Source On State Resistance vs.

Gate to Source Voltage

−10

−1

−0.1

−1

−10

−100

−0.01

−100

−0.1

−0.001

−20

−12

−16

−8

−4

−2

−6

−8

−10

−3.0 V

−3.5 V

VGS = 0 V

−100

−10

−1

−0.1

−0.01

−0.001

−1

−2

−3

−5

−4

−1

−10

100

−100

1000

100

−50

100

150

200

Tc = 25

°C

Pulse Test

Tc = 175

°C

−40°C

Pulse Test

VDS = −10 V

VGS = −4.5 V

−10 V

Tc = 175

°C

−40°C

ID = −10 A

Pulse Test

ID = −10 A

Pulse Test

VGS = −4.5 V

−10 V

Operation

in this area

is limited R

DS(on)

Tc = 25

°C

Pulse Test

−4.0 V

−4.5 V

−10 V

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