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RJM0407JSC Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza RJM0407JSC
Descripción Electrónicos  40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
PDF  12 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJM0407JSC Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJM0407JSC
Preliminary
R07DS0368EJ0100 Rev.1.00
Page 4 of 11
Sep 20, 2012
Main Characteristics
 MOS1, 2, 3 (Nch)
10
1
0.1
110
100
20
12
16
4
8
04
6
8
210
100
10
1
0.1
0.01
0.001
0
12
3
4
0.01
100
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
0.1
0.001
110
1
10
Drain Current ID (A)
Static Drain to Source State On Resistance
vs. Drain Current
100
1000
100
VGS = 0 V
3.0 V
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
50
−50
0
50
100
150
200
0
20
10
40
30
50
40
30
20
10
04
8
12
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Tc = 175
°C
25
°C
−40°C
VGS = 4.5 V
10 V
VDS = 10 V
Pulse Test
Tc = 175
°C
25
°C
−40°C
ID = 10 A
Pulse Test
ID = 10 A
Pulse Test
VSG = 4.5 V
10 V
Tc = 25
°C
1 shot Pulse
DC Operation
PW = 10 ms
Operation
in this area
is limited R
DS(on)
Tc = 25
°C
Pulse Test
Tc = 25
°C
Pulse Test
4.5 V
3.5 V
4.0 V
10 V



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